machine/samd51: implement Flash interface
Signed-off-by: deadprogram <ron@hybridgroup.com>
Этот коммит содержится в:
родитель
6a45b73fcb
коммит
51c1579c3d
3 изменённых файлов: 193 добавлений и 1 удалений
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@ -1,4 +1,4 @@
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//go:build nrf || nrf51 || nrf52 || nrf528xx || stm32f4 || stm32l4 || stm32wlx || atsamd21
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//go:build nrf || nrf51 || nrf52 || nrf528xx || stm32f4 || stm32l4 || stm32wlx || atsamd21 || atsamd51 || atsame5x
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package machine
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@ -7,8 +7,11 @@
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package machine
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import (
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"bytes"
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"device/arm"
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"device/sam"
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"encoding/binary"
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"errors"
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"runtime/interrupt"
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"unsafe"
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)
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@ -2074,3 +2077,189 @@ func GetRNG() (uint32, error) {
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ret := sam.TRNG.DATA.Get()
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return ret, nil
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}
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// Flash related code
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const memoryStart = 0x0
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// compile-time check for ensuring we fulfill BlockDevice interface
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var _ BlockDevice = flashBlockDevice{}
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var Flash flashBlockDevice
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type flashBlockDevice struct {
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initComplete bool
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}
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// ReadAt reads the given number of bytes from the block device.
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func (f flashBlockDevice) ReadAt(p []byte, off int64) (n int, err error) {
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if FlashDataStart()+uintptr(off)+uintptr(len(p)) > FlashDataEnd() {
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return 0, errFlashCannotReadPastEOF
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}
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f.ensureInitComplete()
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waitWhileFlashBusy()
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data := unsafe.Slice((*byte)(unsafe.Add(unsafe.Pointer(FlashDataStart()), uintptr(off))), len(p))
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copy(p, data)
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return len(p), nil
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}
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// WriteAt writes the given number of bytes to the block device.
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// Only word (32 bits) length data can be programmed.
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// See SAM-D5x-E5x-Family-Data-Sheet-DS60001507.pdf page 591-592.
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// If the length of p is not long enough it will be padded with 0xFF bytes.
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// This method assumes that the destination is already erased.
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func (f flashBlockDevice) WriteAt(p []byte, off int64) (n int, err error) {
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if FlashDataStart()+uintptr(off)+uintptr(len(p)) > FlashDataEnd() {
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return 0, errFlashCannotWritePastEOF
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}
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f.ensureInitComplete()
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address := FlashDataStart() + uintptr(off)
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padded := f.pad(p)
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waitWhileFlashBusy()
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sam.NVMCTRL.CTRLB.Set(sam.NVMCTRL_CTRLB_CMD_PBC | (sam.NVMCTRL_CTRLB_CMDEX_KEY << sam.NVMCTRL_CTRLB_CMDEX_Pos))
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waitWhileFlashBusy()
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sam.NVMCTRL.SetADDR(uint32(address))
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for j := 0; j < len(padded); j += int(f.WriteBlockSize()) {
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// write first word using double-word low order word
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*(*uint32)(unsafe.Pointer(address)) = binary.LittleEndian.Uint32(padded[j : j+int(f.WriteBlockSize()/2)])
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address += uintptr(f.WriteBlockSize()) / 2
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// write second word using double-word high order word
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*(*uint32)(unsafe.Pointer(address)) = binary.LittleEndian.Uint32(padded[j+int(f.WriteBlockSize()/2) : j+int(f.WriteBlockSize())])
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waitWhileFlashBusy()
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sam.NVMCTRL.CTRLB.Set(sam.NVMCTRL_CTRLB_CMD_WQW | (sam.NVMCTRL_CTRLB_CMDEX_KEY << sam.NVMCTRL_CTRLB_CMDEX_Pos))
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waitWhileFlashBusy()
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if err := checkFlashError(); err != nil {
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return j, err
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}
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address += uintptr(f.WriteBlockSize()) / 2
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}
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return len(padded), nil
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}
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// Size returns the number of bytes in this block device.
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func (f flashBlockDevice) Size() int64 {
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return int64(FlashDataEnd() - FlashDataStart())
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}
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const writeBlockSize = 8
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// WriteBlockSize returns the block size in which data can be written to
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// memory. It can be used by a client to optimize writes, non-aligned writes
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// should always work correctly.
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func (f flashBlockDevice) WriteBlockSize() int64 {
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return writeBlockSize
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}
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const eraseBlockSizeValue = 8192
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func eraseBlockSize() int64 {
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return eraseBlockSizeValue
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}
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// EraseBlockSize returns the smallest erasable area on this particular chip
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// in bytes. This is used for the block size in EraseBlocks.
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func (f flashBlockDevice) EraseBlockSize() int64 {
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return eraseBlockSize()
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}
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// EraseBlocks erases the given number of blocks. An implementation may
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// transparently coalesce ranges of blocks into larger bundles if the chip
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// supports this. The start and len parameters are in block numbers, use
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// EraseBlockSize to map addresses to blocks.
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func (f flashBlockDevice) EraseBlocks(start, len int64) error {
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f.ensureInitComplete()
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address := FlashDataStart() + uintptr(start*f.EraseBlockSize())
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waitWhileFlashBusy()
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for i := start; i < start+len; i++ {
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sam.NVMCTRL.SetADDR(uint32(address))
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sam.NVMCTRL.CTRLB.Set(sam.NVMCTRL_CTRLB_CMD_EB | (sam.NVMCTRL_CTRLB_CMDEX_KEY << sam.NVMCTRL_CTRLB_CMDEX_Pos))
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waitWhileFlashBusy()
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if err := checkFlashError(); err != nil {
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return err
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}
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address += uintptr(f.EraseBlockSize())
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}
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return nil
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}
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// pad data if needed so it is long enough for correct byte alignment on writes.
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func (f flashBlockDevice) pad(p []byte) []byte {
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paddingNeeded := f.WriteBlockSize() - (int64(len(p)) % f.WriteBlockSize())
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if paddingNeeded == 0 {
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return p
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}
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padding := bytes.Repeat([]byte{0xff}, int(paddingNeeded))
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return append(p, padding...)
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}
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func (f flashBlockDevice) ensureInitComplete() {
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if f.initComplete {
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return
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}
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// disable caches
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sam.NVMCTRL.SetCTRLA_CACHEDIS0(1)
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sam.NVMCTRL.SetCTRLA_CACHEDIS1(1)
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waitWhileFlashBusy()
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f.initComplete = true
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}
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func waitWhileFlashBusy() {
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for sam.NVMCTRL.GetSTATUS_READY() != sam.NVMCTRL_STATUS_READY {
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}
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}
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var (
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errFlashADDRE = errors.New("errFlashADDRE")
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errFlashPROGE = errors.New("errFlashPROGE")
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errFlashLOCKE = errors.New("errFlashLOCKE")
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errFlashECCSE = errors.New("errFlashECCSE")
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errFlashNVME = errors.New("errFlashNVME")
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errFlashSEESOVF = errors.New("errFlashSEESOVF")
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)
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func checkFlashError() error {
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switch {
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case sam.NVMCTRL.GetINTENSET_ADDRE() != 0:
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return errFlashADDRE
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case sam.NVMCTRL.GetINTENSET_PROGE() != 0:
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return errFlashPROGE
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case sam.NVMCTRL.GetINTENSET_LOCKE() != 0:
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return errFlashLOCKE
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case sam.NVMCTRL.GetINTENSET_ECCSE() != 0:
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return errFlashECCSE
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case sam.NVMCTRL.GetINTENSET_NVME() != 0:
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return errFlashNVME
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case sam.NVMCTRL.GetINTENSET_SEESOVF() != 0:
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return errFlashSEESOVF
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}
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return nil
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}
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@ -187,6 +187,9 @@ func initClocks() {
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// it's 32bit cycle counter for timing.
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//CoreDebug->DEMCR |= CoreDebug_DEMCR_TRCENA_Msk;
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//DWT->CTRL |= DWT_CTRL_CYCCNTENA_Msk;
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// Disable automatic NVM write operations
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sam.NVMCTRL.SetCTRLA_WMODE(sam.NVMCTRL_CTRLA_WMODE_MAN)
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}
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func initRTC() {
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